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The Future of Power Electronics: GaN Semiconductor

Gallium nitride (GaN) is a compound semiconductor consisting of gallium, nitrogen and arsenic. It is a wide bandgap semiconductor with a bandgap of 3.4 eV, higher than silicon (1.1 eV) and gallium arsenide (1.4 eV). This wide bandgap gives GaN power benefits such as higher breakdown voltage, higher electron mobility, and higher operating temperatur

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